Title :
Silicon carbide turns on its power
Author :
Rahman, M. Mahmudur ; Furukawa, Seijiro
Author_Institution :
Dept. of Electr. Eng., Santa Clara Univ., CA, USA
Abstract :
The characteristics of SiC are discussed. The device technology, the various devices that have been fabricated, and the opportunity for fabricating new devices are examined. Techniques for growing large crystals are described.<>
Keywords :
crystal growth; semiconductor materials; semiconductor technology; silicon compounds; SiC; crystal growth; device technology; fabrication; large crystals; semiconductors; Atomic layer deposition; Conducting materials; Electric breakdown; Gallium arsenide; Intelligent sensors; Photonic band gap; Semiconductor materials; Silicon carbide; Stacking; Thermal conductivity;
Journal_Title :
Circuits and Devices Magazine, IEEE
