Title :
Linewidth rebroadening in semiconductor lasers due to lateral spatial holeburning
Author :
Wenzel, H. ; Wünsche, H.J. ; Bandelow, U.
Author_Institution :
Dept. of Phys., Humboldt-Univ., Berlin, Germany
Abstract :
The linewidth of semiconductor lasers is calculated taking into account a transversely inhomogeneous carrier distribution within the active region which gives an additional contribution to laser linewidth if the material linewidth enhancement factor is carrier density-dependent. For the first time it is theoretically shown that lateral spatial holeburning causes linewidth rebroadening in BH DFB lasers at high output power.
Keywords :
distributed feedback lasers; optical hole burning; semiconductor junction lasers; spectral line breadth; BH DFB lasers; active region; additional contribution to laser linewidth; carrier density-dependent; high output power; lateral spatial holeburning; linewidth rebroadening; material linewidth enhancement factor; semiconductor lasers; transversely inhomogeneous carrier distribution;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911425
