• DocumentCode
    1243373
  • Title

    Linewidth rebroadening in semiconductor lasers due to lateral spatial holeburning

  • Author

    Wenzel, H. ; Wünsche, H.J. ; Bandelow, U.

  • Author_Institution
    Dept. of Phys., Humboldt-Univ., Berlin, Germany
  • Volume
    27
  • Issue
    25
  • fYear
    1991
  • Firstpage
    2301
  • Lastpage
    2302
  • Abstract
    The linewidth of semiconductor lasers is calculated taking into account a transversely inhomogeneous carrier distribution within the active region which gives an additional contribution to laser linewidth if the material linewidth enhancement factor is carrier density-dependent. For the first time it is theoretically shown that lateral spatial holeburning causes linewidth rebroadening in BH DFB lasers at high output power.
  • Keywords
    distributed feedback lasers; optical hole burning; semiconductor junction lasers; spectral line breadth; BH DFB lasers; active region; additional contribution to laser linewidth; carrier density-dependent; high output power; lateral spatial holeburning; linewidth rebroadening; material linewidth enhancement factor; semiconductor lasers; transversely inhomogeneous carrier distribution;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19911425
  • Filename
    121326
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1243373