Title :
Operation of strained-layer diode laser bars at 1.94 μm to 27 W QCW
Author :
O´Brien, S. ; Plano, W. ; Major, J. ; Welch, D.F. ; Tally, T.
Author_Institution :
Spectra Diode Labs., San Jose, CA, USA
fDate :
1/19/1995 12:00:00 AM
Abstract :
Laser bars 1 cm long operating at a wavelength of 1.94 μm have been fabricated using strained quantum wells in the InGaAsP material system lattice-matched to InP. At pulse lengths of 0.5 ms with a 5% duty cycle the laser bars demonstrated record-level peak optical powers greater than 27 W at a wavelength of 1.94 μm. Pulses up to 5 ms in duration were demonstrated with pulse energies approaching 90 mJ
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; quantum well lasers; 0.5 to 5 ms; 1 cm; 1.94 micron; 27 W; 90 mJ; InGaAsP-InP; laser bars; lattice-matching; peak optical power; strained quantum wells; strained-layer diode laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950062
