Title :
Cavity length dependence of photopumped lasing properties of MOCVD-grown ZnSe/ZnMgSSe double-heterostructure
Author :
Toda, A. ; Imanishi, D. ; Kawasumi, T. ; Ishibashi, A.
Author_Institution :
Res. Center, Sony Corp., Yokohama, Japan
fDate :
1/19/1995 12:00:00 AM
Abstract :
An internal loss of 4.6 cm-1 is estimated from the cavity length dependence of photopumped blue lasing at room temperature (RT) with a ZnSe/ZnMgSSe double-heterostructure (DH) grown by metal organic chemical vapour deposition (MOCVD). The low internal loss being comparable to that of molecular beam epitaxy (MBE)-grown DH, implies the feasibility of realising an MOCVD-grown DH device
Keywords :
II-VI semiconductors; laser cavity resonators; magnesium compounds; optical losses; optical pumping; semiconductor growth; semiconductor lasers; semiconductor materials; vapour phase epitaxial growth; zinc compounds; DH device; MOCVD; ZnSe-ZnMgSSe; ZnSe/ZnMgSSe double-heterostructure; blue lasing; cavity length dependence; internal loss; photopumped lasing properties; room temperature;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950065
