Title :
Carrier screening of electric field and electroabsorption saturation in InGaAs-GaAs quantum well structure
Author :
Chin, M.K. ; Niki, S. ; Wieder, H.H. ; Chang, W.S.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, CA, USA
Abstract :
Saturation of the electroabsorption is obtained in the quantum confined Stark effect (QCSE) at low optical intensities and low electric fields, in a strained InGaAs-GaAs quantum well modulator structure operating at the exciton energy. This effect is attributed to carrier-induced screening of the internal electric field, and its implications for devices using the QCSE are discussed.
Keywords :
III-V semiconductors; Stark effect; electroabsorption; gallium arsenide; indium compounds; semiconductor quantum wells; InGaAs-GaAs; QCSE; carrier-induced screening; electric field screening effect; electroabsorption saturation; low electric fields; low optical intensities; quantum confined Stark effect; semiconductors; strained InGaAs-GaAs quantum well modulator structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911431
