• DocumentCode
    1243506
  • Title

    Comparison of differential gain in single quantum well and bulk double heterostructure lasers

  • Author

    Zhao, Bin ; Chen, Tiffani R. ; Yariv, Amnon

  • Author_Institution
    California Inst. of Technol., Pasadena, CA, USA
  • Volume
    27
  • Issue
    25
  • fYear
    1991
  • Firstpage
    2343
  • Lastpage
    2345
  • Abstract
    The differential gain in single quantum well and bulk double heterostructure lasers is compared. In variance with previous predictions, no differential gain enhancement is found in single quantum well structure lasers at room temperature. Only at low temperatures do the quantum well lasers possess higher differential gain than bulk double heterostructure lasers. The results have important implications in the area of high speed phenomena for these devices.
  • Keywords
    laser theory; semiconductor junction lasers; DH type; bulk double heterostructure; differential gain; low temperatures; room temperature; semiconductor lasers; single quantum well;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19911451
  • Filename
    121349