DocumentCode :
1243506
Title :
Comparison of differential gain in single quantum well and bulk double heterostructure lasers
Author :
Zhao, Bin ; Chen, Tiffani R. ; Yariv, Amnon
Author_Institution :
California Inst. of Technol., Pasadena, CA, USA
Volume :
27
Issue :
25
fYear :
1991
Firstpage :
2343
Lastpage :
2345
Abstract :
The differential gain in single quantum well and bulk double heterostructure lasers is compared. In variance with previous predictions, no differential gain enhancement is found in single quantum well structure lasers at room temperature. Only at low temperatures do the quantum well lasers possess higher differential gain than bulk double heterostructure lasers. The results have important implications in the area of high speed phenomena for these devices.
Keywords :
laser theory; semiconductor junction lasers; DH type; bulk double heterostructure; differential gain; low temperatures; room temperature; semiconductor lasers; single quantum well;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19911451
Filename :
121349
Link To Document :
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