DocumentCode
1243506
Title
Comparison of differential gain in single quantum well and bulk double heterostructure lasers
Author
Zhao, Bin ; Chen, Tiffani R. ; Yariv, Amnon
Author_Institution
California Inst. of Technol., Pasadena, CA, USA
Volume
27
Issue
25
fYear
1991
Firstpage
2343
Lastpage
2345
Abstract
The differential gain in single quantum well and bulk double heterostructure lasers is compared. In variance with previous predictions, no differential gain enhancement is found in single quantum well structure lasers at room temperature. Only at low temperatures do the quantum well lasers possess higher differential gain than bulk double heterostructure lasers. The results have important implications in the area of high speed phenomena for these devices.
Keywords
laser theory; semiconductor junction lasers; DH type; bulk double heterostructure; differential gain; low temperatures; room temperature; semiconductor lasers; single quantum well;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19911451
Filename
121349
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