• DocumentCode
    1243954
  • Title

    Comparison of Indentation and Scribing Behaviors of Crystalline and Initially Deformed Silicon Tips by Molecular Dynamics Simulation

  • Author

    Kim, Hyun-Joon ; Oh, Tae-Seok ; Kim, Dae-Eun

  • Author_Institution
    Dept. of Mech. Eng., Yonsei Univ., Seoul
  • Volume
    45
  • Issue
    5
  • fYear
    2009
  • fDate
    5/1/2009 12:00:00 AM
  • Firstpage
    2328
  • Lastpage
    2331
  • Abstract
    Silicon probe tips are used widely in micro and nano-systems such as AFM, MEMS, and probe recording. The mechanical integrity of the tip is important to assure reliable performance of the tip during contact as well as sliding. Crystalline silicon normally forms a tetrahedral structure, however, under high pressure it is known that the structure transforms to a different phase. This can cause a change in the contact phenomena. In this work, the silicon probe tip deformation process during nano-indentation was investigated by using molecular dynamics simulation. In addition, scribing simulation was carried out to observe the frictional characteristics of crystalline and amorphous silicon structures. The simulation results showed that the structure of silicon near the surface was permanently deformed at a contact stress of approximately 17 GN/m2 and the deformation process could be monitored by observing the bond-angle distribution graph. It was also found that the atomic structure of the silicon tip in the contact region affected the frictional behavior of the tip with respect to fluctuation periodicity and magnitude.
  • Keywords
    bond angles; deformation; elemental semiconductors; friction; molecular dynamics method; nanoindentation; silicon; Si; amorphous silicon structures; atomic structure; bond-angle distribution graph; contact stress; crystalline silicon; friction; molecular dynamics simulation; nanoindentation; scribing property; silicon probe tip deformation; Friction; silicon; simulation; strain;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2009.2016518
  • Filename
    4815985