DocumentCode :
1244143
Title :
Demonstration of 4H-SiC UV single photon counting avalanche photodiode
Author :
Xin, X. ; Yan, Fengping ; Alexandrove, P. ; Sun, Xinghua ; Stahle, C.M. ; Hu, Jiankun ; Matsumura, Mieko ; Li, Xin ; Weiner, M. ; Zhao, H.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, USA
Volume :
41
Issue :
4
fYear :
2005
Firstpage :
212
Lastpage :
214
Abstract :
The first 4H-SiC UV single photon counting avalanche photodiode has been designed, fabricated and characterised. Spectral quantum efficiency from 250 to 370 nm is presented. Single photon counting at room temperature is demonstrated for the first time and counting efficiency is reported.
Keywords :
avalanche photodiodes; photon counting; semiconductor growth; silicon compounds; sputter deposition; sputter etching; ultraviolet detectors; ultraviolet spectra; wide band gap semiconductors; 250 to 370 nm; 293 to 298 K; 4H-SiC UV photodiode; SiC; photon counting efficiency; room temperature; semiconductor growth; single photon counting avalanche photodiode; spectral quantum efficiency; sputter deposition; sputter etching;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20057320
Filename :
1397417
Link To Document :
بازگشت