DocumentCode
1244143
Title
Demonstration of 4H-SiC UV single photon counting avalanche photodiode
Author
Xin, X. ; Yan, Fengping ; Alexandrove, P. ; Sun, Xinghua ; Stahle, C.M. ; Hu, Jiankun ; Matsumura, Mieko ; Li, Xin ; Weiner, M. ; Zhao, H.J.
Author_Institution
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, USA
Volume
41
Issue
4
fYear
2005
Firstpage
212
Lastpage
214
Abstract
The first 4H-SiC UV single photon counting avalanche photodiode has been designed, fabricated and characterised. Spectral quantum efficiency from 250 to 370 nm is presented. Single photon counting at room temperature is demonstrated for the first time and counting efficiency is reported.
Keywords
avalanche photodiodes; photon counting; semiconductor growth; silicon compounds; sputter deposition; sputter etching; ultraviolet detectors; ultraviolet spectra; wide band gap semiconductors; 250 to 370 nm; 293 to 298 K; 4H-SiC UV photodiode; SiC; photon counting efficiency; room temperature; semiconductor growth; single photon counting avalanche photodiode; spectral quantum efficiency; sputter deposition; sputter etching;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20057320
Filename
1397417
Link To Document