Title :
Ultra-high frequency monolithically integrated quantum well infrared photodetector up to 75 GHz
Author :
Grant, P.D. ; Dudek, Rainer ; Wolfson, L. ; Buchanan, M. ; Liu, H.C.
Author_Institution :
Inst. for Microstruct. Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada
Abstract :
An integrated quantum well infrared photodetector for ultra-high speed and frequency sensing in the mid-infrared has been developed. The photodetector is mounted on a microwave connector with either a ´K´ or ´V´ connector. The device was characterised at a temperature of 100 K by optical heterodyne generation of photocurrent in the frequency range DC to 75 GHz. Photoresponse at 75 GHz was approximately 30% that at DC, indicating very fast performance.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; infrared detectors; photoconductivity; photodetectors; quantum well devices; semiconductor quantum wells; 100 K; 75 GHz; GaAs; GaAs-AlGaAs; microwave connector; monolithic integrated photodetector; optical heterodyne generation; photocurrent; quantum well infrared photodetector; ultra high frequency photodetector;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20057428
