Shielded channel double-gate MOSFET: a novel device for reliable nanoscale CMOS applications

Author

Orouji, Ali A. ; Kumar, M. Jagadesh

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol., New Delhi, India

Volume

5

Issue

3

fYear

2005

Firstpage

509

Lastpage

514

Abstract

In this paper, the unique features exhibited by a novel double-gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) in which the front gate consists of two side gates to 1) electrically shield the channel region from any drain voltage variation and 2) act as an extremely shallow virtual extension to the source/drain are presented. This structure exhibits significantly reduced short-channel effects (SCEs) when compared with the conventional DG MOSFET. Using two-dimensional (2-D) and two-carrier device simulation, the improvement in device performance focusing on threshold voltage dependence on channel length, electric field in the channel, subthreshold swing, and hot carrier effects, all of which can affect the reliability of complementary metal oxide semiconductor (CMOS) devices, was investigated.

Keywords

CMOS integrated circuits; MOSFET; hot carriers; nanotechnology; semiconductor device reliability; silicon-on-insulator; SOI MOSFET; double gate MOSFET; drain voltage variation; hot carrier effects; nanoscale CMOS; reliability; shielded channel; short channel effects; Cost function; Double-gate FETs; Helium; Hot carrier effects; MOSFET circuits; Materials reliability; Nanoscale devices; Semiconductor device reliability; Threshold voltage; Two dimensional displays; Hot carrier effect; SOI MOSFET; shielded channel (SC); short-channel effects (SCEs); side gate; subthreshold swing; threshold voltage; two-dimensional (2-D) simulation;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2005.853505

Filename

1545914