Power-bandwidth considerations in the design of MESFET distributed amplifiers

Author

Prasad, S.N. ; Beyer, James B. ; Chang, Ik-soo

Author_Institution

Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA

Volume

36

Issue

7

fYear

1988

fDate

7/1/1988 12:00:00 AM

Firstpage

1117

Lastpage

1123

Abstract

Quantitative procedures are given for the design of MESFET distributed amplifiers using series capacitors in the device gate circuits. It is shown that the choice of series capacitors allows the designer to trade gain for bandwidth while maintaining a given gain-bandwidth product. It is also shown that the input power capability can be increased by the use of series capacitors when the device pinch-off is the power-limiting factor. It is pointed out how the addition of series capacitors makes it possible to increase the gate periphery of an amplifier, which results in an increase in power-bandwidth product

Keywords

field effect integrated circuits; microwave amplifiers; microwave integrated circuits; MESFET distributed amplifiers; design tradeoffs; device gate circuits; device pinch-off; gain-bandwidth product; gate periphery; input power capability; power bandwidth considerations; series capacitors; Attenuation; Bandwidth; Broadband amplifiers; Capacitors; Distributed amplifiers; FETs; Frequency; Gallium arsenide; MESFET circuits; Power amplifiers;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.3646

Filename

3646