Title :
AlGaN-GaN HEMTs on patterned silicon (111) substrate
Author :
Shuo Jia ; Dikme, Y. ; Deliang Wang ; Chen, K.J. ; Lau, K.M. ; Heuken, M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China
fDate :
3/1/2005 12:00:00 AM
Abstract :
We report the AlGaN-GaN high-electron mobility transistors (HEMTs) grown and fabricated on patterned silicon (111) substrates. A crack-free AlGaN-GaN HEMT heterostructure was grown on top of rectangular silicon ridges patterned on the silicon substrate. Fabrication of HEMT on the ridges was demonstrated using a polyimide planarization process. Maximum drain current density of 1.05 A/mm and peak transconductance of 150 mS/mm were achieved with 1.0 μm gate-length. The current gain cutoff frequency and maximum frequency of oscillation were 9.7 and 20.5 GHz, respectively, for the 1 μm × 300 μm devices.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium compounds; high electron mobility transistors; microwave field effect transistors; planarisation; semiconductor growth; silicon; wide band gap semiconductors; 1.0 micron; 20.5 GHz; 9.7 GHz; AlGaN-GaN; HEMT fabrication; HEMT heterostructure; Si; current gain cutoff frequency; high electron mobility transistors; maximum drain current density; maximum oscillation frequency; patterned silicon (111) substrate; peak transconductance; polyimide planarization process; rectangular silicon ridges; Aluminum gallium nitride; Current density; Cutoff frequency; Fabrication; HEMTs; MODFETs; Planarization; Polyimides; Silicon; Transconductance; (111) silicon; AlGaN–GaN; high-electron mobility transistor (HEMT); patterned substrate;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.842647
