• DocumentCode
    1244636
  • Title

    A novel program-erasable high-/spl kappa/ AlN-Si MIS capacitor

  • Author

    Lai, C.H. ; Chin, A. ; Hung, B.F. ; Cheng, C.F. ; Won Jong Yoo ; Li, M.F. ; Chunxiang Zhu ; McAlister, S.P. ; Dim-Lee Kwong

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
  • Volume
    26
  • Issue
    3
  • fYear
    2005
  • fDate
    3/1/2005 12:00:00 AM
  • Firstpage
    148
  • Lastpage
    150
  • Abstract
    We demonstrate a programmable-erasable MIS capacitor with a single layer high-/spl kappa/ AlN dielectric on Si having a high capacitance density of /spl sim/5 fF/μm2. It has low program and erase voltages of +4 and -4 V, respectively. Such an erase function is not available in other single layer Al2O3, AlON, or other known high-/spl kappa/ dielectric capacitors, where the threshold voltage (V/sub th/) shifts continuously with voltage. This device exhibits good data retention with a V/sub th/ change of only 0.06 V after 10 000 s.
  • Keywords
    III-V semiconductors; MIS capacitors; aluminium compounds; silicon; AlN-Si; capacitance density; dielectric capacitors; erase function; program erasable MIS capacitor; Capacitance; Councils; Dielectrics; Impedance; MIM capacitors; Radio frequency; Resonance; Resonant frequency; Temperature; Threshold voltage; Capacitor; erase; high-; program;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2004.842100
  • Filename
    1397842
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1244636