Title :
Characterization of nickel Germanide thin films for use as contacts to p-channel Germanium MOSFETs
Author :
Spann, J.Y. ; Anderson, R.A. ; Thornton, T.J. ; Harris, G. ; Thomas, S.G. ; Tracy, Clarence
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
fDate :
3/1/2005 12:00:00 AM
Abstract :
We have measured the physical properties and resistivity of nickel germanide thin films formed by the rapid thermal annealing of nickel metal on p-type germanium substrates. Rutherford back scattering and high-resolution electron diffraction confirm that the stoichiometry of the resulting nickel germanide film corresponds to NiGe and has an orthorhombic unit cell with dimensions comparable to that of bulk samples. Transmission electron microscopy shows a poly-crystalline film structure with grain size > 0.1 μm. The resistivity values for films annealed in the range 350/spl deg/C-500/spl deg/C are comparable to those of metal silicides. Measurements of the specific contact resistance suggest that values approaching 2 × 10/sup -7/ /spl Omega/.cm2 can be realized using NiGe formed on heavily doped p-type germanium.
Keywords :
MOSFET; Rutherford backscattering; contact resistance; electrical conductivity; electron diffraction; germanium compounds; nickel compounds; semiconductor thin films; 350 to 500 C; NiGe; Rutherford back scattering; conductivity measurement; contact resistance; electron diffraction; germanium MOSFET; germanium substrates; metal silicides; nickel germanide thin films; p-channel; physical properties; polycrystalline film structure; resistivity; stoichiometry; thermal annealing; transmission electron microscopy; Conductivity; Electrons; Germanium; MOSFETs; Nickel; Rapid thermal annealing; Scattering; Substrates; Thermal resistance; Transistors; Conductivity measurement; MOSFETs; germanium;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.842653
