Title :
Laterally scaled Si-Si0.7Ge0.3 n-MODFETs with fmax>200 GHz and low operating bias
Author :
Koester, S.J. ; Saenger, K.L. ; Chu, J.O. ; Ouyang, Q.C. ; Ott, J.A. ; Jenkins, K.A. ; Canaperi, D.F. ; Tornello, J.A. ; Jahnes, C.V. ; Steen, S.E.
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
3/1/2005 12:00:00 AM
Abstract :
We report on the dc and RF characterization of laterally scaled, Si-SiGe n-MODFETs. Devices with gate length, Lg, of 80 nm had fT=79 GHz and fmax=212 GHz, while devices with Lg=70 nm had fT as high as 92 GHz. The MODFETs displayed enhanced fT at reduced drain-to-source voltage, Vds, compared to Si MOSFETs with similar fT at high Vds.
Keywords :
Ge-Si alloys; MOSFET; high electron mobility transistors; millimetre wave field effect transistors; silicon; 212 GHz; 70 nm; 79 GHz; 80 nm; 92 GHz; RF characterization; Si-Si0.7Ge0.3; dc characterization; drain-to-source voltage; laterally scaled n-MODFET; Fabrication; Germanium silicon alloys; HEMTs; Implants; MODFET circuits; MOSFETs; Radio frequency; Resists; Silicon germanium; Tin; High mobility; MODFET; Silicon germanium;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.843222
