High-performance poly-Si TFTs fabricated by implant-to-silicide technique

Author

Lin, C.-P. ; Yi-Hsuan Xiao ; Bing-Yue Tsui

Author_Institution

Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan

Volume

26

Issue

3

fYear

2005

fDate

3/1/2005 12:00:00 AM

Firstpage

185

Lastpage

187

Abstract

High-performance poly-Si thin-film transistors (TFTs) with fully silicided source/drain (FSD) and ultrashort shallow extension (SDE) fabricated by implant-to-silicide (ITS) technique are proposed for the first time. Using the FSD structure, the S/D parasitic resistance can be suppressed effectively. Using the ITS technique, an ultrashort and defect-free SDE can also be formed quickly at about 600/spl deg/C. Therefore, the FSD poly-Si TFTs exhibits better current-voltage characteristics than those of conventional TFTs. It should be noted that the on/off current ratios of FSD poly-Si TFT (W/L=1/4μm) is over 3.3×10/sup 7/, and the field-effective mobility of that device is about 141.6 (cm²/Vs). Moreover, the superior short-channel characteristics of FSD poly-Si TFTs are also observed. It is therefore believed that the proposed FSD poly-Si TFT is a very promising TFT device.

Keywords

elemental semiconductors; silicon; silicon compounds; thin film transistors; Si; TFT; current-voltage characteristics; field-effective mobility; fully silicided source/drain; implant-to-silicide technique; on-off current ratios; parasitic resistance; poly-Si thin-film transistors; ultrashort shallow extension; Active matrix liquid crystal displays; Annealing; Circuits; Current-voltage characteristics; Fabrication; Rapid thermal processing; Silicides; Silicon; Thin film transistors; Throughput; Implant-to-silicide (ITS); silicide source/drain (S/D); thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.843929

Filename

1397854