Title :
1677 V, 5.7 mΩ·cm2 4H-SiC BJTs
Author :
Zhang, Jianhui ; Alexandrov, Petre ; Zhao, Jian H. ; Burke, Terry
Author_Institution :
Electr. & Comput. Eng. Dept., State Univ. of New Jersey, Piscataway, NJ, USA
fDate :
3/1/2005 12:00:00 AM
Abstract :
This letter reports the development of a high-performance power 4H-SiC bipolar junction transistor (BJT) with, simultaneously, a high blocking voltage and a low specific on-resistance (R_ON). A single BJT cell with an active area of 0.61 mm2 achieves an open base collector-to-emitter blocking voltage (Vceo) of 1677 V and conducts up to 3.2 A at a forward voltage drop of VCE=3.0 V, corresponding to a low R_ON of 5.7 mΩ·cm2 up to Jc=525 A/cm2 and a record high value of VB2/RSP_ON of 493 MW/cm2.
Keywords :
bipolar transistors; power transistors; silicon compounds; wide band gap semiconductors; forward voltage drop; high blocking voltage; low specific on-resistance; open base collector-to-emitter blocking voltage; power 4H-SiC bipolar junction transistor; power transistors; silicon carbide; single BJT cell; Conductivity; Etching; Fabrication; Helium; Low voltage; MOSFET circuits; Military computing; Plasma temperature; Power transistors; Silicon carbide; Bipolar junction transistors (BJTs); power transistors; silicon carbide;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.843928
