DocumentCode
1244710
Title
A new protection circuit for high-voltage current saturation of LEST
Author
Jeon, Byung-Chul ; Ji, In-Hwan ; Choi, Young-Hwan ; Kim, Soo-Seong ; Choi, Yearn-Ik ; Han, Min-Koo
Author_Institution
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
Volume
26
Issue
3
fYear
2005
fDate
3/1/2005 12:00:00 AM
Firstpage
191
Lastpage
193
Abstract
A new protection circuit for high-voltage current saturation of a lateral emitter switched thyristor (LEST) is proposed. We fabricated this circuit by employing a widely used insulated gate bipolar transistor compatible process. A high-voltage current saturation exceeding 200 V was measured in the EST with the proposed protection circuit, while the current saturation of the conventional LEST is limited to 17 V by the breakdown of the lateral MOSFET.
Keywords
MOSFET; insulated gate bipolar transistors; overvoltage protection; thyristors; LEST; high-voltage current saturation; insulated gate bipolar transistor; lateral MOSFET; lateral emitter switched thyristor; protection circuit; Anodes; Breakdown voltage; Current measurement; Electrical resistance measurement; Insulated gate bipolar transistors; MOSFET circuits; Protection; Switching circuits; Threshold voltage; Thyristors; High-voltage current saturation; lateral emitter switched thyristor (LEST); protection circuit;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2004.842255
Filename
1397856
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