DocumentCode :
1244742
Title :
Temperature-dependence of noise figure of monolithic RF transformers on a thin (20 μm) silicon substrate
Author :
Yo-Sheng Lin ; Hsiao-Bin Liang ; Tao Wang ; Shey-Shi Lu
Author_Institution :
Dept. of Electr. Eng., Nat. Chi-Nan Univ., Puli, Taiwan
Volume :
26
Issue :
3
fYear :
2005
fDate :
3/1/2005 12:00:00 AM
Firstpage :
208
Lastpage :
211
Abstract :
We demonstrate an analysis of the effect of temperature (from -45/spl deg/C to 175/spl deg/C) on the quality factor (Q-factor) and noise figure (NF) performances of monolithic RF transformers on both normal (700 μm) and thin (20 μm) silicon substrates. The results show a 36% reduction in minimum NF (NFmin) at 5 GHz and a 40.9% increase in maximum Q-factor (Qmax) if the silicon substrate is thinned down from 700 to 20 μm, which means the silicon substrate thinning is effective in improving the Q-factor and NF performances of transformers. The present analysis is helpful for RF engineers to design less temperature-sensitive low-voltage supply transformer-feedback low-noise amplifiers and voltage-controlled-oscillators, and other radio-frequency integrated circuits which include transformers.
Keywords :
Q-factor; feedback amplifiers; high-frequency transformers; integrated circuit noise; monolithic integrated circuits; radiofrequency integrated circuits; silicon; voltage-controlled oscillators; -45 to 175 C; 20 micron; 5 GHz; Si; maximum Q-factor; monolithic RF transformers; noise figure performance; quality factor; radio-frequency integrated circuits; temperature dependence; temperature-sensitive low-voltage supply transformer-feedback low-noise amplifiers; thin silicon substrate; voltage-controlled-oscillators; Design engineering; Low-noise amplifiers; Noise figure; Noise measurement; Performance analysis; Q factor; Radio frequency; Silicon; Temperature; Transformers; Monolithic transformer; noise figure (NF); radio frequency (RF); temperature; thin silicon substrate;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2005.843214
Filename :
1397862
Link To Document :
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