DocumentCode :
1244795
Title :
Optical frequency modulation and intensity modulation suppression in a master-slave semiconductor laser system with direct modulation of the master laser
Author :
Haldar, M.K. ; Coetzee, J.C. ; Gan, K.B.
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Volume :
41
Issue :
3
fYear :
2005
fDate :
3/1/2005 12:00:00 AM
Firstpage :
280
Lastpage :
286
Abstract :
An injection-locked laser system where the master laser is directly modulated is analyzed using rate equations. Both quasi-static and dynamic analyses are carried out in order to ensure that the parameters lie inside the locking range. The analysis is valid for all injection levels. The quasi-static analysis provides a good basis for explaining the phenomena. It is shown that, for a given detuning frequency, maximum suppression of intensity modulation (IM) occurs at a specific value of the injection ratio. At low frequencies, the frequency modulation (FM) index of the slave laser bears a constant ratio to the FM index of the master laser of less than unity. It is illustrated that the direct FM scheme is only viable for modulation frequencies up to about 100 MHz. Large IM suppression can only be achieved for large values of the linewidth enhancement factor of the slave laser, small magnitude of the detuning frequency, and low injection ratio. The latter two conditions are associated with narrow limits on stable operation, and care should be taken to avoid instability.
Keywords :
frequency modulation; optical modulation; semiconductor lasers; spectral line breadth; 100 GHz; detuning frequency; direct modulation; dynamic analyses; frequency modulation index; injection-locked laser system; intensity modulation; intensity modulation suppression; linewidth enhancement factor; master laser; master-slave laser system; modulation suppression; optical frequency modulation; quasistatic analyses; rate equations; semiconductor laser system; slave laser; stable operation; Chirp modulation; Equations; Frequency modulation; Gallium nitride; Injection-locked oscillators; Intensity modulation; Master-slave; Optical modulation; Optical sensors; Semiconductor lasers; Frequency modulation; injection-locked lasers; intensity modulation suppression; semiconductor lasers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2004.841501
Filename :
1397874
Link To Document :
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