Title :
Theoretical investigations of [110] IV-VI lead salt edge-emitting lasers
Author :
Lu, Xiaoliang ; Shi, Zhisheng
Author_Institution :
Sch. of Electr. & Comput. Eng., Univ. of Oklahoma, Norman, OK, USA
fDate :
3/1/2005 12:00:00 AM
Abstract :
Theoretical simulations on a new [110]-orientated IV-VI lead-salt midinfrared (IR) edge-emitting laser are performed in comparison with the conventional [100] orientated laser. The modal gain of quantum-well (QW) structure on [110] orientation is significantly higher than that on the [100] orientation. Light versus current (L-I) characteristics at different operation temperatures are simulated by solving the coupled rate equations. The maximum operation temperature of [110] laser is 70 degree higher than that of conventional [100] laser. To further improve the laser performance a new Si3N4 clad laser structure is proposed to improve the heat dissipation. The effects of other parameters on the performance of the lasers, such as Auger recombination, Schockley-Read recombination, facet reflectivity and cavity length, are also investigated. The simulated results show that with optimized laser structure and modestly reduced Auger recombination [110] IV-VI lead-salt edge-emitting laser could produce output power of about 10 mW at room temperature.
Keywords :
IV-VI semiconductors; electron-hole recombination; infrared sources; laser cavity resonators; laser cooling; laser theory; lead compounds; quantum well lasers; reflectivity; silicon compounds; surface emitting lasers; 10 mW; 20 degC; Auger recombination; Schockley-Read recombination; Si3N4; Si3N4 clad laser; [110] IV-VI lead salt lasers; [110] orientation; cavity length; coupled rate equations; edge-emitting lasers; facet reflectivity; heat dissipation; midinfrared lasers; modal gain; optimized laser structure; quantum well structure; room temperature; Differential equations; Laser modes; Laser theory; Optical coupling; Power generation; Power lasers; Quantum well lasers; Radiative recombination; Reflectivity; Temperature; IV–VI lead salt; [110] orientation; mid-IR lasers; semiconductor lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2004.841607
