Title :
Low-cost, high-efficiency, and high-speed SiGe phototransistors in commercial BiCMOS
Author :
Tao Yin ; Pappu, A.M. ; Apsel, A.B.
Author_Institution :
Dept. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
We present a new approach to obtain low-cost and high-performance SiGe phototransistors in a commercial BiCMOS process. Photoresponsivity of 2.7 A/W was obtained for 850-nm detection due to the transistor gain, corresponding to 393% quantum efficiency. Responsivities of 0.13 A/W and 0.07mA/W were achieved for 1060 and 1310 nm with SiGe absorption. With V/sub ce/=2 V, we measure a -3-dB bandwidth of up to 5.3 GHz for phototransistors with a 4-μm2 active area and 2.0 GHz for phototransistors with 60-μm2 active area and finger contacts. This high-efficiency and high-speed phototransistor is an enabling device for monolithic receiver integration.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; integrated optoelectronics; optical receivers; photodetectors; phototransistors; semiconductor materials; 1060 nm; 1310 nm; 2 V; 2.0 GHz; 850 nm; SiGe; SiGe absorption; SiGe phototransistors; commercial BiCMOS; finger contacts; high-efficiency phototransistors; high-speed phototransistors; low-cost phototransistors; monolithic receiver integration; photoresponsivity; transistor gain; Absorption; Bandwidth; BiCMOS integrated circuits; Germanium silicon alloys; Heterojunction bipolar transistors; High speed optical techniques; Optical receivers; Photodetectors; Phototransistors; Silicon germanium; BiCMOS; Si photonics; SiGe; photodetectors; phototransistors;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2005.860060
