Simple planar structure for high-performance AlInAs avalanche photodiodes

Author

Yagyu, E. ; Ishimura, E. ; Nakaji, M. ; Aoyagi, T. ; Tokuda, Y.

Author_Institution

Adv. Technol. R&D Center, Mitsubishi Electr. Corp., Hyogo, Japan

Volume

18

Issue

1

fYear

2006

Firstpage

76

Lastpage

78

Abstract

We demonstrate a high-performance AlInAs avalanche photodiode (APD) based on a novel planar diode concept. The APD features a simple planar structure without a guardring, which simplifies production making it more like a PIN photodiode process. Measured device characteristics designed for 10-Gb/s use were a dark current of 0.16 μA, responsivity of 0.88 A/W, and a gain-bandwidth product of 120 GHz. Reliability was guaranteed by an aging test exceeding 2400 h, whose conditions were a reverse dark current of 100 μA at 175/spl deg/C. These features and performance indicate that the AlInAs APD is highly practical.

Keywords

III-V semiconductors; ageing; aluminium compounds; avalanche photodiodes; indium compounds; optical communication equipment; optical fibre communication; p-i-n photodiodes; semiconductor device reliability; 0.16 muA; 10 Gbit/s; 100 muA; 175 degC; AlInAs; AlInAs avalanche photodiodes; PIN photodiode process; aging test; dark current; gain-bandwidth product; high-performance avalanche photodiodes; planar diode concept; planar structure; reliability; responsivity; Avalanche photodiodes; Dark current; Diodes; Distributed Bragg reflectors; Molecular beam epitaxial growth; Optical fiber communication; Optical receivers; P-n junctions; PIN photodiodes; Production; Avalanche photodiodes (APDs); optical fiber communication; optical receivers; productivity;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2005.860399

Filename

1546042