A novel GaAs power MESFET with low distortion characteristics employing semi-insulating setback layer under the gate

Author

Furukawa, Hidetosihi ; Tateoka, Kazuki ; Miyatsuji, Kazuo ; Sugimura, Akihisa ; Ueda, Daisuke

Author_Institution

Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan

Volume

43

Issue

2

fYear

1996

fDate

2/1/1996 12:00:00 AM

Firstpage

193

Lastpage

200

Abstract

A low distortion GaAs power MESFET has been developed by employing a semi-insulating setback layer under the gate. The setback region was obtained by diffusing chromium from the Cr/Pt/Au gate metal in self-aligned manner. The novel power FET with the setback layer was found to be insensitive to surface trapping effects. They showed only 5-6 percent frequency dispersion of drain current at 1 MHz compared to DC condition. Because of this small frequency dispersion, the typical measurement FET, which has a surface setback layer, with a gate width of 36 mm exhibited 1.5 dB larger output power at 1 dB gain compression point than that of the FET without the setback layer. Moreover, in the π/4 shift-QPSK modulation that has been most popular in digital mobile communication system, the FET exhibited 11 dB smaller adjacent channel leakage power than the conventional one at the output power of 31.5 dBm

Keywords

III-V semiconductors; characteristics measurement; chromium; diffusion; electric distortion; gallium arsenide; gold; mobile communication; platinum; power MESFET; quadrature phase shift keying; 1 MHz; 36 mm; Cr-Pt-Au-GaAs; QPSK modulation; adjacent channel leakage power; digital mobile communication system; distortion characteristics; frequency dispersion; gain compression point; gate width; power MESFET; self-aligned diffusion; semi-insulating setback layer; Chromium; Dispersion; FETs; Frequency measurement; Gain measurement; Gallium arsenide; Gold; MESFETs; Power generation; Power measurement;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.481717

Filename

481717