Numerical analysis of frequency dispersion of transconductance in GaAs MESFETs

Author

Lo, Shih-Hsien ; Lee, Chien-Ping

Author_Institution

Nat. Nano Device Lab., Hsinchu, Taiwan

Volume

43

Issue

2

fYear

1996

fDate

2/1/1996 12:00:00 AM

Firstpage

213

Lastpage

219

Abstract

A fully two-dimensional numerical model for the transconductance dispersion in GaAs MESFETs is presented. According to simulated results, the dominating surface traps belong to the hole trap type in order to obtain consistent results with reported measurements. The AC frequency-dependent modulation of negative surface charge can explain this anomalous phenomenon. The holes injecting from and emitting out of the gate metal electrode interact with the surface hole traps, and result in the change of the gate-to-source and the gate-to-drain resistances, which in turn cause the change in transconductance. The gate voltage and the gate length effects on the dispersion are also considered. Good agreement with reported results is obtained

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; hole traps; semiconductor device models; surface states; AC modulation; GaAs; GaAs MESFET; frequency dispersion; gate length; gate voltage; gate-to-drain resistance; gate-to-source resistance; negative surface charge; numerical analysis; surface hole traps; transconductance; two-dimensional model; Dispersion; Electrical resistance measurement; Electrodes; Frequency modulation; Gallium arsenide; MESFETs; Numerical analysis; Numerical models; Transconductance; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.481720

Filename

481720