Title :
0.15 μm T-shaped gate fabrication for GaAs MODFET using phase shift lithography
Author :
Takenaka, Hiroshi ; Ueda, Daisuke
Author_Institution :
Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
fDate :
2/1/1996 12:00:00 AM
Abstract :
A new fabrication process of GaAs MODFETs with 0.15 micron T-shaped gate has been developed by using phase shift lithography. Sub-quarter micron footprints of T-shaped gates are defined as line patterns by PEL (pattern-edge line) method using chemically stable positive photoresist. Parasitic capacitances such as Cgs and Cgd are also reduced by the air-gap incorporated in the present process. An implemented GaAs MODFET exhibited the NF of 0.36 dB and the gain of 11.5 dB at the frequency of 12 GHz
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; microwave field effect transistors; photolithography; semiconductor device noise; semiconductor technology; 0.15 micron; 0.36 dB; 11.5 dB; 12 GHz; GaAs; GaAs MODFET; T-shaped gate; air-gap; chemically stable positive photoresist; fabrication; parasitic capacitances; pattern-edge line method; phase shift lithography; sub-quarter micron footprints; Air gaps; Chemicals; Fabrication; Gallium arsenide; HEMTs; Lithography; MODFETs; Noise measurement; Parasitic capacitance; Resists;
Journal_Title :
Electron Devices, IEEE Transactions on
