Nitrogen in-situ doped poly buffer LOCOS: simple and scalable isolation technology for deep-submicron silicon devices

Author

Kobayashi, Toshio ; Nakayama, Satoshi ; Miyake, Masayasu ; Okazaki, Yukio ; Inokawa, Hiroshi

Author_Institution

NTT LSI Labs., Kanagawa, Japan

Volume

43

Issue

2

fYear

1996

fDate

2/1/1996 12:00:00 AM

Firstpage

311

Lastpage

317

Abstract

This paper describes a novel LOCOS (LOCal Oxidation of Silicon) technology that uses nitrogen in-situ doped amorphous-Si as a buffer layer instead of the undoped poly-Si used in conventional Poly Buffered LOCOS (PBL). This technology makes it possible to use a thin 6-nm pad oxide by preventing the formation of voids in Si buffer layer and improves edge morphology and effective dimension loss. Therefore, the technology will be used in advanced LSI fabrication with KrF lithography, notwithstanding that the number of processing steps is the same as conventional PBL. This new LOCOS technology is the most promising isolation technology for the deep-submicron era due to its simplicity and scalability

Keywords

CMOS integrated circuits; VLSI; amorphous semiconductors; elemental semiconductors; integrated circuit technology; isolation technology; large scale integration; nitrogen; oxidation; photolithography; semiconductor doping; silicon; KrF; KrF lithography; LSI fabrication; N insitu doped poly buffer LOCOS; Si:N; VLSI fabrication; amorphous Si; deep-submicron Si devices; edge morphology; local oxidation of Si; scalable isolation technology; Buffer layers; Fabrication; Isolation technology; Large scale integration; Lithography; Morphology; Nitrogen; Oxidation; Scalability; Silicon;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.481733

Filename

481733