Title :
The characteristics of polysilicon oxide grown in pure N2O
Author :
Lai, Chao Sung ; Lei, Tan Fu ; Lee, Chung Len
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
2/1/1996 12:00:00 AM
Abstract :
This work reports on the characteristics of polysilicon oxide grown in pure N2O (N2O-grown polyoxide). The obtained polyoxide has a desirable polarity asymmetry of J-E characteristic, i.e., a lower leakage current and a higher breakdown electric field, which are ideal for the nonvolatile memory application, when the top electrode is positively biased. The asymmetry is due to the smoother surface of the N2O-grown polyoxide. Comparing to conventional polyoxides, the N2O-grown polyoxide has a lower electron trapping rate and a larger Qbd, which are attributed to the incorporated nitrogen at the polyoxide/poly-1 interface. The centroids of trapped charges of the N2O-grown polyoxide are more away from the polyoxide/poly-1 interface and this affects the polarity dependence of trapping
Keywords :
dielectric thin films; electric breakdown; electron traps; leakage currents; oxidation; silicon compounds; J-E characteristic; N2O; N2O-grown polyoxide; Si-SiO2; breakdown electric field; charge-to-breakdown; electron trapping; leakage current; nonvolatile memory; polarity asymmetry; polyoxide/poly-1 interface; polysilicon oxide; surface smoothness; Design for quality; Dielectric breakdown; Dielectric substrates; Electrodes; Electron traps; Leakage current; Nitrogen; Nonvolatile memory; Oxidation; Surface morphology;
Journal_Title :
Electron Devices, IEEE Transactions on
