Large area MOS-gated power devices using fusible link technology

Author

Venkatraman, Prasad ; Baliga, B.Jayant

Author_Institution

Power Products Div., Motorola Inc., Phoenix, AZ, USA

Volume

43

Issue

2

fYear

1996

fDate

2/1/1996 12:00:00 AM

Firstpage

347

Lastpage

351

Abstract

A new approach for improving the yield of large area MOS-gated power devices is described based upon wafer repair using fusible links of aluminum or polysilicon to isolate defective segments from the rest of the device. Unlike previously reported wafer repair techniques, the proposed approach does not require any knowledge of the location of the fault (gate-to-source short) within the device. Work done on the development of power-MOS process compatible fusible links is described in this paper. Power MOSFET´s and IGBT´s have been successfully fabricated using these fusible links to perform wafer repair

Keywords

insulated gate bipolar transistors; power MOSFET; semiconductor technology; Al; IGBTs; Si; aluminum; defective segment isolation; fabrication; fault; fusible link technology; gate-to-source short; large area MOS-gated power devices; polysilicon; power MOSFETs; wafer repair; yield; Aluminum; Fabrication; Insulated gate bipolar transistors; Isolation technology; MOSFET circuits; Power MOSFET; Power electronics; Terminology; Testing; Thyristors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.481738

Filename

481738