Title :
Reverse biased safe operating area of emitter switched thyristors
Author :
Iwamuro, Noriyuki ; Baliga, B. Jayant
Author_Institution :
Adv. Device Tech. Lab., Fuji Electr. Co. Ltd., Nagano, Japan
fDate :
2/1/1996 12:00:00 AM
Abstract :
The reverse biased safe operating area (RBSOA) of 600 V and 2500 V EST devices has been analyzed by numerical simulation for the first time and compared with those for the IGBT and MCT. The dependence of the RBSOA upon the P-base resistance in the main thyristor structure of the EST has also been investigated. Two types of destructive failure mechanisms have been identified: one due to the voltage-induced avalanche multiplication, and the other associated with current-induced latch-up of the parasitic thyristor. It is demonstrated that, although the voltage-induced limit is identical for all three devices, the current induced RBSOA for the EST can be improved over the IGBT and MCT with little sacrifice of the on-state characteristics. In addition, a comparison of the RBSOA with the forward biased safe operating area (FBSOA) has been performed
Keywords :
MOS-controlled thyristors; avalanche breakdown; failure analysis; semiconductor device reliability; 2500 V; 600 V; EST devices; FBSOA; P-base resistance; current induced RBSOA; current-induced latch-up; destructive failure mechanisms; emitter switched thyristors; forward biased SOA; numerical simulation; parasitic thyristor; reverse biased SOA; safe operating area; voltage-induced avalanche multiplication; voltage-induced limit; Circuits; Insulated gate bipolar transistors; Inverters; Low voltage; MOSFETs; Power semiconductor devices; Protection; Snubbers; Thyristors; Voltage control;
Journal_Title :
Electron Devices, IEEE Transactions on
