DocumentCode
1245135
Title
Near IR sensitive liquid crystal light valve with hydrogenated amorphous silicon photoconductor
Author
Du, Piyi ; Han, Gaorong ; Ding, Zishang
Author_Institution
Dept. of Mater. Sci. & Eng., Zhejiang Univ., Hangzhou, China
Volume
43
Issue
2
fYear
1996
fDate
2/1/1996 12:00:00 AM
Firstpage
360
Lastpage
362
Abstract
An ITO/a-Si:H photosensor has been used in a near IR sensitive LCLV. In preparation of the photosensor, two main problems have been solved. One is the enhancement of IR transmittance of ITO; the other is improvement of the ratio of photo/dark conductivity in a-Si:H in the near IR range. As a result, IR transmittance as high as 80% and ratio of photo/dark conductivity larger than one order of magnitude are obtained. Images converted from near IR scenery by the LCLV are observed
Keywords
amorphous semiconductors; elemental semiconductors; infrared detectors; liquid crystal devices; photoconducting devices; photodetectors; silicon; IR transmittance; ITO-Si:H; ITO/a-Si:H photosensor; InSnO-Si:H; hydrogenated amorphous silicon photoconductor; near IR sensitive liquid crystal light valve; photo/dark conductivity ratio; Amorphous silicon; Electromagnetic wave absorption; Image converters; Indium tin oxide; Liquid crystals; Optical films; Optical sensors; Photoconductivity; Photonic band gap; Valves;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.481741
Filename
481741
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