• DocumentCode
    1245141
  • Title

    Device parameter optimization for reduced short channel effects in retrograde doping MOSFET´s

  • Author

    Agrawal, Bhavna ; De, Vivek K. ; Meindl, James D.

  • Author_Institution
    Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
  • Volume
    43
  • Issue
    2
  • fYear
    1996
  • fDate
    2/1/1996 12:00:00 AM
  • Firstpage
    365
  • Lastpage
    368
  • Abstract
    A simple technique to optimize the device parameters of the retrograde channel doping MOSFET to minimize short channel effects for a constant threshold voltage is presented in this work. The results indicate that the highest possible substrate doping does not necessarily result in minimum short channel effects
  • Keywords
    MOSFET; optimisation; semiconductor doping; MOSFETs; device parameter optimization; retrograde doping; short channel effects; threshold voltage; Breakdown voltage; CMOS technology; Charge carrier density; Degradation; Diodes; Doping; Electron devices; Integrated circuit technology; MOSFET circuits; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.481743
  • Filename
    481743
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1245141