Title :
Device parameter optimization for reduced short channel effects in retrograde doping MOSFET´s
Author :
Agrawal, Bhavna ; De, Vivek K. ; Meindl, James D.
Author_Institution :
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
fDate :
2/1/1996 12:00:00 AM
Abstract :
A simple technique to optimize the device parameters of the retrograde channel doping MOSFET to minimize short channel effects for a constant threshold voltage is presented in this work. The results indicate that the highest possible substrate doping does not necessarily result in minimum short channel effects
Keywords :
MOSFET; optimisation; semiconductor doping; MOSFETs; device parameter optimization; retrograde doping; short channel effects; threshold voltage; Breakdown voltage; CMOS technology; Charge carrier density; Degradation; Diodes; Doping; Electron devices; Integrated circuit technology; MOSFET circuits; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
