Title :
Nonstationary response of MSM photodetectors
Author :
Gvozdic, Dejan M. ; Radunovic, J.B.
Author_Institution :
Fac. of Electr. Eng., Belgrade Univ.
fDate :
2/1/1996 12:00:00 AM
Abstract :
This paper analyses the influence of nonstationary effects on carrier transport in a Metal-Semiconductor-Metal Photodetector (MSM-PD) made of a two-valley semiconductor. A phenomenological model is used for 2D numerical simulation of carrier transport and intervalley transfer. The complete analysis of the time and frequency response of the MSM-PD has been made for various micron and submicron structures, bias voltages and incident light wavelengths
Keywords :
many-valley semiconductors; metal-semiconductor-metal structures; photodetectors; semiconductor device models; 2D numerical simulation; MSM photodetector; carrier transport; intervalley transfer; metal-semiconductor-metal photodetector; nonstationary response; two-valley semiconductor; Charge carrier processes; Electrodes; Equations; Fingers; Gallium arsenide; Hydrodynamics; Numerical simulation; Photodetectors; Substrates; Time factors;
Journal_Title :
Electron Devices, IEEE Transactions on
