• DocumentCode
    1245174
  • Title

    Simulation of single-electron transport in nanostructured quantum dots

  • Author

    Babiker, S.

  • Author_Institution
    Thales U.K, UK
  • Volume
    52
  • Issue
    3
  • fYear
    2005
  • fDate
    3/1/2005 12:00:00 AM
  • Firstpage
    392
  • Lastpage
    396
  • Abstract
    Resonant tunneling via discrete energy states in single-electron electronic systems have been observed in many nanostructured configurations. The nodes of such circuits may assume either a continuum of energy states or a set of discrete states with different degeneracy factors. This paper presents a general-purpose simulator intended to provide a unique platform that is able to simulate such circuits. The model is described and then used to study some typical simple circuits. It is shown that even for simple circuits, the interplay between energy spectrum, sensitivity to voltage variations and Coulomb blockade conditions might lead to very complicated current-voltage characteristics.
  • Keywords
    circuit simulation; energy states; nanoelectronics; quantum dots; single electron devices; Coulomb blockade conditions; circuit simulator; current-voltage characteristics; discrete energy states; energy spectrum; general-purpose simulator; nanostructured quantum dots; resonant tunneling; single-electron electronic systems; single-electron transport; voltage variations sensitivity; Charge transfer; Circuit simulation; Electrons; Energy states; Equations; Nanoscale devices; Quantum dots; Resonant tunneling devices; US Department of Transportation; Voltage; Master equation; quantum dots; single-electron electronics;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2005.843879
  • Filename
    1397989