Title :
Effect of induced gate noise at zero drain bias in field-effect transistors
Author_Institution :
Dept. of Electr. & Comput. Eng., Southwestern Louisiana Univ., Lafayette, LA, USA
fDate :
3/1/2005 12:00:00 AM
Abstract :
According to classical theories, a MOS transistor with zero source-to-drain voltage behaves like a passive resistor exhibiting channel thermal noise and the effect of induced gate noise vanishes. Here, we show that the effect of induced gate noise persists as conductance fluctuations even under these "equilibrium" conditions without disturbing the Nyquist relationship governing the channel thermal noise.
Keywords :
MOSFET; field effect transistors; semiconductor device noise; thermal noise; MOS transistor; Nyquist relationship; channel thermal noise; conductance fluctuations; excess equilibrium noise; field effect transistors; induced gate noise; passive resistor; zero drain bias; zero source-to-drain voltage; Active noise reduction; Contact resistance; FETs; Fluctuations; JFETs; MOSFET circuits; Resistors; Surface resistance; Thermal resistance; Voltage; Excess equilibrium noise; MOSFET; induced gate noise;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2005.843891
