Title :
Multi-λ ridge waveguide gain-coupled DFB laser array
Author :
Li, G.P. ; Makino, T. ; Wu, C.-M.
Author_Institution :
Bell-Northern Res., Ottawa, Ont., Canada
fDate :
2/1/1995 12:00:00 AM
Abstract :
Multi-wavelength gain-coupled quantum well DFB laser array has been fabricated on an InP substrate by simply varying the ridge waveguide width of the element lasers. Owing to the gain-coupling effect, seven singlemode lasing wavelengths around 1.55 μm with ~2 nm spacing were obtained simultaneously. The lasers had low threshold currents and small beam divergence
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser beams; laser modes; quantum well lasers; semiconductor laser arrays; waveguide lasers; 1.55 mum; InGaAsP-InP; InP; InP substrate; gain-coupling effect; low threshold currents; multi-λ ridge waveguide gain-coupled DFB laser array; quantum well DFB laser array; ridge waveguide width; singlemode lasing wavelengths; small beam divergence; Chemical lasers; Distributed feedback devices; Holographic optical components; Optical arrays; Optical waveguides; Quantum well lasers; Threshold current; Waveguide lasers; Wavelength division multiplexing; Wet etching;
Journal_Title :
Lightwave Technology, Journal of
