Title :
A novel monolithic LNA integrating a common-source HEMT with an HBT Darlington amplifier
Author :
Kobayashi, Kevin W. ; Umemoto, Donald K. ; Block, Tom R. ; Oki, Aaron K. ; Streit, Dwight C.
Author_Institution :
Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
fDate :
12/1/1995 12:00:00 AM
Abstract :
Here we report on the results of a novel HEMT-HBT LNA MMIC fabricated using selective molecular beam epitaxy (MBE) techniques. This unique circuit monolithically integrates a low-noise common-source HEMT with an HBT Darlington feedback amplifier to achieve high gain, low noise figure, and wide bandwidth utilizing a compact direct-coupled topology. The miniature direct-coupled MMIC is 0.9×0.7 mm2 in size and obtains 1-8 GHz bandwidth, greater than 17.5 dB gain, and a minimum noise figure of 2.5 dB. The maximum IP3 is 18 dBm with a saturated output power (Psat)>12 dBm. The HEMT-HBT amplifier achieves comparable Psat performance to the conventional HBT-only Darlington amplifier while achieving over 2-dB reduction in noise figure across the band. This work benchmarks the first HEMT-HBT MMIC that illustrates microwave performance advantages when compared to an HBT-only design
Keywords :
MMIC amplifiers; integrated circuit noise; microwave amplifiers; molecular beam epitaxial growth; wideband amplifiers; 1 to 8 GHz; 17.5 dB; 2 to 10 GHz; 2.5 dB; HBT Darlington amplifier; HEMT-HBT LNA MMIC; common-source HEMT; direct-coupled topology; high gain; low noise figure; maximum IP3; microwave performance advantages; minimum noise figure; monolithic LNA; saturated output power; selective molecular beam epitaxy; wide bandwidth; Bandwidth; Circuit topology; Feedback amplifiers; Feedback circuits; Gain; HEMTs; Heterojunction bipolar transistors; MMICs; Molecular beam epitaxial growth; Noise figure;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
