A 5-10 GHz 15-W GaAs MESFET amplifier with flat gain and power responses

Author

Itoh, Yasushi ; Mochizuki, Mitsuru ; Kohno, Masaki ; Masuno, Hiroyuki ; Takagi, Tadashi ; Mitsui, Yasuo

Author_Institution

Electro-Opt. & Microwave Syst. Lab., Mitsubishi Electr. Corp., Kanagawa, Japan

Volume

5

Issue

12

fYear

1995

fDate

12/1/1995 12:00:00 AM

Firstpage

454

Lastpage

456

Abstract

A 5-10 GHz 15-W GaAs MESFET amplifier has been developed. It utilizes a multisection maximally flat impedance transformer whose length is designed to become a quarter wavelength at the highest frequency of the design band to achieve flat gain and flat power responses over a wide bandwidth. With the use of this transformer, the amplifier has achieved a linear gain of 9±1 dB, a P1 dB of 41.8±1 dBm, and a power-added efficiency of 27.5±7.5% over 5-10 GHz, which demonstrate the highest power-bandwidth product ever achieved by high-power amplifiers using GaAs MESFET´s, PHEMT´s or HBT´s

Keywords

III-V semiconductors; MESFET integrated circuits; MMIC power amplifiers; field effect MMIC; gallium arsenide; impedance convertors; microwave power amplifiers; power amplifiers; wideband amplifiers; 15 W; 27.5 percent; 5 to 10 GHz; 9 dB; GaAs; GaAs MESFET amplifier; P1 dB; flat gain; flat power response; high-power amplifiers; linear gain; multisection maximally flat impedance transformer; power-added efficiency; power-bandwidth product; quarter wavelength; wide bandwidth; Dielectric substrates; Frequency; Gain; Gallium arsenide; High power amplifiers; Impedance matching; MESFETs; Microwave amplifiers; Power amplifiers; Power system reliability;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.481859

Filename

481859