Title :
The “gain-lever" effect in InGaAsP/InP multiple quantum well lasers
Author :
Seltzer, C.P. ; Westbrook, L.D. ; Wickes, H.J.
Author_Institution :
British Telecom Res. Labs., Ipswich, UK
fDate :
2/1/1995 12:00:00 AM
Abstract :
The gain-lever-effect has been assessed in both multiple quantum well (MQW) and bulk active region lasers having a range of lengths and split ratios in the top contact. Compared with a conventional single-contact laser, a 500-μm MQW FP device with a top-contact split ratio of 8:1 exhibited >15-dB improvement in AM efficiency and a signal-to-noise ratio improvement of 7.5 dB. With proper impedance matching, these figures may be improved. A reduced noise figure is obtained at the expense of dynamic range with an additional nonlinearity seen experimentally due to thermal and carrier leakage when compared with simulations carried out using a harmonic balance model. Used carefully, these gain-lever lasers are useful components for future analogue fiber-optic systems
Keywords :
III-V semiconductors; amplitude modulation; gallium arsenide; gallium compounds; impedance matching; indium compounds; laser noise; nonlinear optics; optical fibre communication; optical modulation; quantum well lasers; 500 mum; AM efficiency; InGaAs-InP; InGaAsP-InP; InGaAsP/InP multiple quantum well lasers; MQW FP device; additional nonlinearity; analogue fiber-optic systems; bulk active region lasers; carrier leakage; dynamic range; gain-lever effect; gain-lever lasers; harmonic balance model; impedance matching; reduced noise figure; signal-to-noise ratio improvement; simulations; single-contact laser; split ratios; thermal leakage; top contact; top-contact split ratio; Dynamic range; Fiber lasers; Impedance matching; Indium phosphide; Laser modes; Laser noise; Noise figure; Quantum well devices; Quantum well lasers; Signal to noise ratio;
Journal_Title :
Lightwave Technology, Journal of
