DocumentCode
1245492
Title
A wideband HEMT cascode low-noise amplifier with HBT bias regulation
Author
Kobayashi, K.W. ; Umemoto, D.K. ; Block, T.R. ; Oki, A.K. ; Streit, D.C.
Author_Institution
Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Volume
5
Issue
12
fYear
1995
fDate
12/1/1995 12:00:00 AM
Firstpage
457
Lastpage
459
Abstract
We have achieved broadband low-noise performance and dc bias regulation in a single compact HEMT-HBT MMIC. The self-biased MMIC achieves greater than 13 dB gain from 1-8 GHz with a noise figure of less than 1.9 dB across the band and a minimum noise figure of 1.6 dB. The MMIC consists of a HEMT cascode first stage and a source-follower output stage, with shunt feedback between the stages to obtain good broadband noise figure and gain performance. Bias regulation is realized by monolithically integrating an HBT current regulator with the HEMT LNA using selective MBE. This is the first microwave demonstration of key monolithic HEMT-HBT circuit functionality combined with state-of-the-art low-noise figure performance, realized in a miniature 0.9 x 1.0 mm2 MMIC
Keywords
MMIC amplifiers; integrated circuit noise; microwave amplifiers; molecular beam epitaxial growth; wideband amplifiers; 1 to 8 GHz; 1.6 dB; 1.9 dB; 13 dB; HBT bias regulation; HBT current regulator; HEMT LNA; HEMT cascode first stage; HEMT-HBT MMIC; broadband low-noise performance; minimum noise figure; selective MBE; self-biased MMIC; shunt feedback; source-follower output stage; wideband HEMT cascode low-noise amplifier; HEMTs; Heterojunction bipolar transistors; Low-noise amplifiers; MMICs; Microwave devices; Molecular beam epitaxial growth; Monolithic integrated circuits; Noise figure; Performance gain; Regulators;
fLanguage
English
Journal_Title
Microwave and Guided Wave Letters, IEEE
Publisher
ieee
ISSN
1051-8207
Type
jour
DOI
10.1109/75.481860
Filename
481860
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