Monolithic integration of InGaAsP-laser with transferred-electron device as fast laser driver

Author

Hahn, D. ; Schlachetzki, A.

Author_Institution

Inst. fur Hochfrequenztech., Tech. Univ. Braunschweig, Germany

Volume

32

Issue

1

fYear

1996

fDate

1/1/1996 12:00:00 AM

Firstpage

14

Lastpage

19

Abstract

A monolithically integrated laser driver circuit has been fabricated incorporating an InGaAs-transferred electron device (TED) and an InGaAsP mushroom stripe laser emitting at 1.3-μm wavelength. The TED provides a large-signal modulation of the laser diode along with a pulse shaping of the optical output signal. A threshold current of 18 mA of the integrated laser has been obtained. The modulation of the optical output signal by the TED has been demonstrated. For practical application of the circuit under dc-bias conditions the thermal resistance of the TED´s has been calculated and an optimum device structure is proposed. The possibility of triggering the circuit optically will be discussed

Keywords

Gunn devices; III-V semiconductors; driver circuits; electro-optical modulation; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; optical communication equipment; semiconductor lasers; 1.3 mum; 18 mA; InGaAs; InGaAs-transferred electron device; InGaAsP; InGaAsP mushroom stripe laser; InGaAsP-laser; dc-bias conditions; fast laser driver; integrated laser; large-signal modulation; laser diode; laser driver circuit; monolithic integration; optical output signal; optically triggered circuit; optimum device structure; pulse shaping; thermal resistance; threshold current; transferred-electron device; Diode lasers; Driver circuits; Electron devices; Electron optics; Monolithic integrated circuits; Optical modulation; Optical pulse shaping; Pulse modulation; Stimulated emission; Thermal resistance;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.481915

Filename

481915