Title :
Barrier composition dependence of differential gain and external differential quantum efficiency in 1.3-μm strained-layer multiquantum-well lasers
Author :
Kito, Masahiro ; Otsuka, Nobuyuki ; Ishino, Masato ; Matsui, Yasushi
Author_Institution :
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
fDate :
1/1/1996 12:00:00 AM
Abstract :
Dependence of the differential gain and the external differential quantum efficiency on the composition of InGaAsP barrier layers were investigated for 1.3 μm InGaAsP-InGaAsP compressively strained layer (SL) multiquantum well (MQW) lasers. In this investigation, we compared between SL-MQW lasers and unstrained MQW lasers having the same well thicknesses and the same emitting wavelength in order to clarify the effect of strain for each barrier composition. As a result It has been found that the barrier composition has large influence on the differential gain and the external differential quantum efficiency in the SL-MQW lasers. Narrower band-gap barrier means little effect of strain on the differential gain due to the electron overflow from a well layer, while wider band-gap barrier means degradation in the differential gain and the external differential quantum efficiency due to the nonuniform injection of hole into a well layer. In this experiment, the barrier composition of 1.05 μm is suitable for 1.3 μm InGaAsP-InGaAsP SL-MQW lasers to realize large differential gain and high external differential quantum efficiency simultaneously
Keywords :
III-V semiconductors; deformation; gallium arsenide; gallium compounds; indium compounds; laser transitions; quantum well lasers; 1.05 mum; 1.3 mum; InGaAsP-InGaAsP; InGaAsP-InGaAsP compressively strained layer lasers; MQW lasers; barrier composition; barrier composition dependence; differential gain; electron overflow; emitting wavelength; external differential quantum efficiency; high external differential quantum efficiency; nonuniform hole injection; strained-layer multiquantum-well lasers; unstrained MQW lasers; well layer; Capacitive sensors; Epitaxial growth; Laser theory; Laser transitions; Quantum well devices; Quantum well lasers; Strain measurement; Temperature measurement; Threshold current; X-ray lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
