Polycrystalline diamond pressure sensor

Author

Wur, Darrel R. ; Davidson, Jimmy L. ; Kang, Weng Poo ; Kinser, Donald L.

Author_Institution

Dept. of Electr. Eng., Vanderbilt Univ., Nashville, TN, USA

Volume

4

Issue

1

fYear

1995

fDate

3/1/1995 12:00:00 AM

Firstpage

34

Lastpage

41

Abstract

The piezoresistance and other characteristics of boron doped polycrystalline diamond films (PDF´s) were determined by analyzing free-standing films that had been formed on silicon. These structures were adhered to a dielectric substrate, and from bending stresses a gauge factor was estimated. Subsequently, a monolithic all-diamond pressure sensor was designed and fabricated, whereby doped diamond resistors reside on a dielectric diamond substrate diaphragm. The process and piezoresistance behavior of their structure is described

Keywords

boron; diamond; elemental semiconductors; micromachining; microsensors; piezoelectric transducers; piezoresistance; piezoresistive devices; pressure sensors; semiconductor thin films; strain gauges; B doped films; C:B; bending stresses; diamond pressure sensor; dielectric diamond substrate diaphragm; doped diamond resistors; gauge factor; piezoresistance; polycrystalline diamond films; Chemical vapor deposition; Conductive films; Grain boundaries; Piezoresistance; Resistors; Semiconductor films; Semiconductor materials; Sensor phenomena and characterization; Thermal conductivity; Thermal expansion;

fLanguage

English

Journal_Title

Microelectromechanical Systems, Journal of

Publisher

ieee

ISSN

1057-7157

Type

jour

DOI

10.1109/84.365368

Filename

365368