Title :
Strain analysis of silicon-on-insulator films produced by zone melting recrystallization
Author :
Zavracky, Paul M. ; Adams, George G. ; Aquilino, Paul D.
Author_Institution :
Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA
fDate :
3/1/1995 12:00:00 AM
Abstract :
Silicon-on-Insulator (SOI) wafers produced by the Zone-Melting-Recrystallization (ZMR) method were evaluated to determine the level of built-in strain. Micromechanical strain measurement structures were produced by surface micromachining the thin film silicon epitaxial layer. A variety of test structures and a new tensile strain measurement device were used to determine the level of strain in the material. Results indicated that the maximum strain in the ZMR material is less than 2×10-4 and that there is a significant orientation dependence
Keywords :
deformation; micromachining; microsensors; recrystallisation; silicon-on-insulator; strain measurement; zone melting; zone melting recrystallisation; SOI films; Si; ZMR material; built-in strain; micromechanical strain measurement structures; orientation dependence; strain analysis; surface micromachining; tensile strain measurement device; thin film Si epitaxial layer; zone melting recrystallization; Capacitive sensors; Materials testing; Micromachining; Micromechanical devices; Semiconductor epitaxial layers; Semiconductor films; Semiconductor thin films; Silicon on insulator technology; Strain measurement; Tensile strain;
Journal_Title :
Microelectromechanical Systems, Journal of
