DocumentCode
1245896
Title
High-efficiency GaAs-based pHEMT C-band power amplifier
Author
Brown, J. J. ; Pusl, J. A. ; Hu, M. ; Schmitz, A.E. ; Docter, D.P. ; Shealy, James B. ; Case, M.G. ; Thompson, M.A.
Volume
6
Issue
2
fYear
1996
Firstpage
91
Abstract
A high-efficiency C-Band power amplifier design utilizing AIGaAs/InGaAs/GaAs pHEMT´s is reported. On-wafer active loadpull power measurements at 4.5 GHz of a 0.25μm x 1.2 mm pHEMT exhibited an output power of 0.35 W and power-added efficiency of 79%. A singlestage MIC amplifier fabricated with a 2.8-mm-wide pHEMT resulted in P/sub out/ = 1.2 W and PAE = 74% at 4 GHz. These results demonstrate the potential of pHEMT´s to significantly improve the efficiency performance of microwave solid state power amplifiers compared to present MESFET designs.
Keywords
Doping; Frequency; Gallium arsenide; High power amplifiers; MESFETs; Microwave amplifiers; PHEMTs; Power amplifiers; Satellite broadcasting; Solid state circuits;
fLanguage
English
Journal_Title
Microwave and Guided Wave Letters, IEEE
Publisher
ieee
ISSN
1051-8207
Type
jour
DOI
10.1109/75.481999
Filename
481999
Link To Document