320 Gb/s high-speed ATM switching system hardware technologies based on copper-polyimide MCM

Author

Yamanaka, Naoaki ; Endo, Ken-ichi ; Genda, Kouichi ; Fukuda, Hideki ; Kishimoto, Tohru ; Sasaki, Shin-ichi

Author_Institution

NTT Network Service Syst., Tokyo, Japan

Volume

18

Issue

1

fYear

1995

fDate

2/1/1995 12:00:00 AM

Firstpage

83

Lastpage

91

Abstract

This paper describes a 320 Gb/s high-speed multichip ATM switching system for broadband ISDN. This system employs a copper-polyimide MCM with 4-layer copper-polyimide signal transmission layers and 15-layer ceramic power supply layers. The system uses 64 MCMs that are interconnected by 98-highway flexible printed circuit connector. Si-bipolar VLSI´s are mounted on MCM´s using the 150 μm very-thin pitch outer lead TAB technique. In addition, a high-performance heat-pipe air cooling technique is adopted. The system switches ATM cells up to 320 Gb/s throughput, which is applicable for future B-ISDN

Keywords

B-ISDN; asynchronous transfer mode; cooling; copper; electronic switching systems; fine-pitch technology; multichip modules; polymer films; tape automated bonding; 15-layer ceramic power supply layers; 320 Gbit/s; 4-layer Cu-polyimide signal transmission layers; B-ISDN; Cu; Cu-polyimide MCM; Si; Si bipolar VLSI devices; broadband ISDN; flexible printed circuit connector; heat-pipe air cooling technique; high-speed ATM switching system; high-speed multichip modules; outer lead TAB technique; switching system hardware technologies; Asynchronous transfer mode; B-ISDN; Ceramics; Connectors; Flexible printed circuits; Hardware; Integrated circuit interconnections; Power supplies; Power system interconnection; Switching systems;

fLanguage

English

Journal_Title

Components, Packaging, and Manufacturing Technology, Part B: Advanced Packaging, IEEE Transactions on

Publisher

ieee

ISSN

1070-9894

Type

jour

DOI

10.1109/96.365493

Filename

365493