Title :
Low-noise distributed amplifier with active load
Author :
Ikalainen, Pertti K.
Author_Institution :
Semicond. Group, Texas Instrum. Inc., Dallas, TX, USA
fDate :
1/1/1996 12:00:00 AM
Abstract :
Conventional distributed amplifiers show a marked increase in noise figure at frequencies below 2···6 GHz, depending on the design, because of noise emanating from a resistor that terminates the input line. It is shown in this letter that a low-noise device can be configured to emulate a one-port resistor, but with lower apparent noise temperature than the physical ambient temperature. The use of such an “electronically cold” resistor in the design of a low-noise distributed amplifier is discussed together with simulated results. The new distributed amplifier shows improved noise performance
Keywords :
UHF amplifiers; circuit noise; distributed amplifiers; microwave amplifiers; active load; amplifier design; apparent noise temperature; electronically cold resistor; low noise pHEMT; low-noise distributed amplifier; noise figure; noise performance; one-port resistor emulation; simulated results; Active noise reduction; Circuit noise; Distributed amplifiers; Frequency; Helium; Low-frequency noise; Noise figure; Resistors; Semiconductor device noise; Temperature;
Journal_Title :
Microwave and Guided Wave Letters, IEEE