Fabrication and performance of planar Schottky diodes with T-gate-like anodes in 200-GHz subharmonically pumped waveguide mixers

Author

Mehdi, I. ; Martin, S.C. ; Dengler, R.J. ; Smith, R.P. ; Siegel, P.H.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

Volume

6

Issue

1

fYear

1996

fDate

1/1/1996 12:00:00 AM

Firstpage

49

Lastpage

51

Abstract

A T-gate-like structure has been developed, fabricated, and tested as the anode for millimeter and submillimeter wave Schottky diodes, The low parasitics of the T-anode diodes yield extremely high cutoff frequencies, making the diodes useable at frequencies well beyond 1 THz. The diodes were tested as an antiparallel-pair, integrated monolithically with microstrip circuitry on a quartz substrate, in a subharmonically pumped waveguide mixer. A double sideband noise temperature of 600 K with a conversion loss of 4.7 dB were measured at 200 GHz. This is believed to be the lowest noise temperature ever reported for a room-temperature subharmonically pumped Schottky diode mixer at this frequency

Keywords

MIMIC; Schottky diode mixers; Schottky diodes; integrated circuit noise; millimetre wave diodes; millimetre wave mixers; semiconductor device noise; submillimetre wave diodes; 1 THz; 200 GHz; 4.7 dB; EHF; MM-wave mixer; SiO₂; T-anode diodes; T-gate-like anodes; THF; antiparallel-pair; double sideband noise temperature; millimeter wave Schottky diodes; monolithic integration; planar Schottky diodes; quartz substrate; room-temperature mixer; subharmonically pumped waveguide mixers; submillimeter wave Schottky diode; Anodes; Circuit testing; Cutoff frequency; Fabrication; Integrated circuit yield; Microstrip; Mixers; Schottky diodes; Submillimeter wave integrated circuits; Temperature;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.482068

Filename

482068