A micromachined low-power temperature-regulated bandgap voltage reference

Author

Reay, Richard J. ; Klaassen, Erno H. ; Kovacs, Gregory T A

Author_Institution

Center for Integrated Syst., Stanford Univ., CA, USA

Volume

30

Issue

12

fYear

1995

fDate

12/1/1995 12:00:00 AM

Firstpage

1374

Lastpage

1381

Abstract

A low-power, temperature-regulated bandgap voltage reference is demonstrated in a commercial CMOS process. Low-power operation is achieved by thermally isolating a small portion of the die using a single postprocess micromachining step requiring no extra masks or modifications to the CMOS process. The reference has a 53000° C/W thermal resistance, a 2.5 ms thermal time constant, and uses 1.5 mW at 25°C. Temperature regulation improves the temperature coefficient from 100 ppm/°C to 9 ppm/°C over 0-80°C

Keywords

CMOS analogue integrated circuits; micromachining; reference circuits; temperature control; thermal resistance; voltage control; voltage regulators; 0 to 80 C; 1.5 mW; CMOS process; bandgap voltage reference; heated substrate; low-power operation; micromachined voltage reference; postprocess micromachining step; temperature coefficient; temperature-regulated voltage reference; thermal resistance; thermal time constant; CMOS process; Circuit stability; Micromachining; Photonic band gap; Resistance heating; Temperature distribution; Temperature sensors; Thermal resistance; Thermal stability; Voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.482164

Filename

482164