DocumentCode
1246536
Title
A 2.7-4.5 V single chip GSM transceiver RF integrated circuit
Author
Stetzler, Trudy D. ; Post, Irving G. ; Havens, Joseph H. ; Koyama, Mikio
Author_Institution
AT&T Bell Labs., Reading, PA, USA
Volume
30
Issue
12
fYear
1995
fDate
12/1/1995 12:00:00 AM
Firstpage
1421
Lastpage
1429
Abstract
This paper describes the design and implementation of a single-chip GSM (Global System for Mobile communications) transceiver RF integrated circuit. The chip includes the RF-to-baseband and baseband-to-RF (receive and transmit) functions, two fixed frequency PLL´s, and a programmable frequency agile UHF synthesizer. It is implemented In a 1.5 μm silicon bipolar process with 12 GHz NPN´s and 110 MHz lateral PNP´s. The receive path uses a single-IF solution including the RF mixer, quadrature demodulator, and variable gain IF amplifier on chip. The transmit path uses a direct-up architecture with an offset mixer and an output buffer capable of driving 0 dBm into 50 Ω. The frequency agile UHF synthesizer switches between receive and transmit modes and settles to within ±50 Hz (0.1 ppm) in less than 500 μs. The UHF synthesizer includes all the synthesizer logic and the oscillator on chip. The only external components are the loop filter and tank circuit. This paper first explains the chip architecture decisions and block level descriptions. The transistor level circuit designs and layout are then discussed. Finally, the performance of the circuit performance versus the requirements is presented
Keywords
UHF integrated circuits; cellular radio; frequency synthesizers; land mobile radio; phase locked loops; transceivers; 1.5 micron; 110 MHz; 12 GHz; 2.7 to 4.5 V; GSM transceiver; RF integrated circuit; RF-to-baseband functions; baseband-to-RF functions; bipolar process; direct-up architecture; fixed frequency PLL; frequency agile UHF synthesizer; loop filter; offset mixer; output buffer; single-IF solution; synthesizer logic; tank circuit; variable gain IF amplifier; Demodulation; Frequency synthesizers; GSM; Gain; Radio frequency; Radiofrequency amplifiers; Radiofrequency integrated circuits; Silicon; Switches; Transceivers;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.482189
Filename
482189
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